DocumentCode :
2772289
Title :
Piece-wise linear approximation of MOS nonlinear junction capacitance in high-frequency class E amplifier design
Author :
Ma, S.W. ; Wong, Hei ; Ho, C.K.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
fYear :
2003
fDate :
16-18 Dec. 2003
Firstpage :
233
Lastpage :
236
Abstract :
This work presents a detailed analysis of the high-frequency class E amplifier realized using MOS transistor with particular attention on the effects of the nonlinear junction capacitance in the drain region. To enable analytical analysis and for easy of circuit design, the junction capacitance is approximated using piece-wise linear functions. Results show that this treatment is accurate enough and the amplifier characteristics calculated with the newly developed design formulae agree very well with those of the Pspice simulation.
Keywords :
HF amplifiers; MOSFET; SPICE; capacitance; integrated circuit design; integrated circuit modelling; semiconductor device models; MOS nonlinear junction capacitance; circuit design; high-frequency class E amplifier design; junction capacitance; piece-wise linear approximation; spice simulation; High power amplifiers; MOS devices; MOSFETs; Parasitic capacitance; Piecewise linear techniques; Power amplifiers; Power generation; Switches; Voltage; Wireless LAN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
Type :
conf
DOI :
10.1109/EDSSC.2003.1283521
Filename :
1283521
Link To Document :
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