Title :
Design for millimeter-wave applications in silicon technologies
Author :
Cathelin, Andreia ; Martineau, B. ; Seller, N. ; Douyère, S. ; Gorisse, J. ; Pruvost, S. ; Raynaud, Ch ; Gianesello, F. ; Montusclat, S. ; Voinigescu, S.P. ; Niknejad, A.M. ; Belot, D. ; Schoellkopf, J.P.
Author_Institution :
FTM, Crolles
Abstract :
This paper presents the potentialities of advanced BiCMOS and CMOS technologies for millimeter-wave applications. To begin, the target applications in these frequency bands are presented: from automotive cruise control radars to wireless links. Then, a large overview of the technological offer to address these applications is presented: SiGe BiCMOS, nanometer bulk and SOI CMOS technologies. This work focuses both on active and passive devices (BEOL) behavior to suit for design above 20 GHz. The paper continues with a presentation of several solutions for integrated circuits on the presented topic: front-end receiver blocks, transmission blocks and frequency synthesis solutions. An overview of state of the art silicon circuits is given. As a conclusion, perspectives regarding future challenges in terms of system integration and applications are discussed.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; millimetre wave circuits; silicon-on-insulator; SOI CMOS technology; SiGe BiCMOS; active device; automotive cruise control radar; frequency synthesis; front-end receiver block; millimeter-wave application; passive device; silicon technology; transmission block; wireless link; Automotive engineering; BiCMOS integrated circuits; CMOS technology; Frequency; Germanium silicon alloys; Integrated circuit synthesis; Integrated circuit technology; Millimeter wave technology; Radar applications; Silicon germanium;
Conference_Titel :
Solid State Circuits Conference, 2007. ESSCIRC 2007. 33rd European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1125-2
DOI :
10.1109/ESSCIRC.2007.4430343
