DocumentCode :
2772676
Title :
Smart MEMS concept for RF and millimeterwave communications
Author :
Dubuc, D. ; Coustou, A. ; Ducarouge, B. ; Grenier, K. ; Pons, P. ; Parra, T. ; Graffeuil, J. ; Plana, R.
Author_Institution :
Nat. Centre for Sci. Res., Univ. Paul Sabatier, Toulouse, France
fYear :
2003
fDate :
16-18 Dec. 2003
Firstpage :
319
Lastpage :
322
Abstract :
This paper outlines the Microsystem concept for the next communications systems. Among the results, we can note that the use of hetero-junction concept in silicon bipolar transistor translates into operating frequencies higher than 100 GHz. Moreover, the MEMS concept leads to very low loss passive circuits useable up to millimeterwave and having the ability of agility. Furthermore, these technologies are becoming to be involved in the realization of smart microsystems for millimeter-wave applications like reconfigurable frond end.
Keywords :
Ge-Si alloys; bipolar integrated circuits; elemental semiconductors; micromechanical devices; millimetre wave bipolar transistors; satellite communication; silicon; MEMS; RF communications; SiGe; microsystem; millimeterwave communications; silicon bipolar transistor; Communication system traffic control; Energy consumption; Germanium silicon alloys; Micromechanical devices; Millimeter wave technology; Radio frequency; Radio spectrum management; Silicon germanium; Switches; Transmitters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
Type :
conf
DOI :
10.1109/EDSSC.2003.1283540
Filename :
1283540
Link To Document :
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