Title :
The impact of the AC current crowding effect on BJT RF noise modeling
Author :
Lee, Wai-Kit ; Man, T.Y. ; Mok, Philip K T ; Ko, P.K. ; Chan, Mansun
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
In this paper, an improved hybrid-π model with equivalent noise sources are proposed. Based on these models, a comparison with the results obtained with the conventional hybrid-π model is made.
Keywords :
bipolar transistors; circuit noise; semiconductor device models; semiconductor device noise; BJT RF noise modeling; ac current crowding effect; circuit noise; semiconductor device models; semiconductor device noise; Capacitance; Circuit noise; Circuit synthesis; Germanium silicon alloys; Heterojunction bipolar transistors; Noise reduction; Proximity effect; Radio frequency; Silicon germanium; Thermal resistance;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283542
