A two-dimensional analytical subthreshold behavior models for short-channel AlGaAs/GaAs HFETs

Author

Chiang, T.K. ; Su, Hsiu-Hung ; Lin, J.M.

Author_Institution

Dept. of Electron. Eng., Southern Taiwan Univ. of Technol., Tainan, Taiwan

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

335

Lastpage

338

Abstract

Short-channel effects on the subthreshold behavior are modeled for self-aligned gated AlGaAs/GaAs HFETs through an analytical potential solution of the two-dimension Poisson´s equation in the subthreshold regime. Based on the minimum heteroface potential, comprehensive and accurate expressions for the short-channel threshold voltage and subthreshold swing are developed. It is found that the 2D electron gas is strongly effected by the DIBL effect which will significantly influence the subthreshold behavior of the AlGaAs/GaAs HFETs. This model not only gives physical insights into the short-channel effects in HFETs but also offers basic designing guideline for the small-geometry AlGaAs/GaAs HFETs.

Keywords

III-VI semiconductors; Poisson equation; aluminium compounds; field effect transistors; gallium arsenide; semiconductor device models; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas; AlGaAs-GaAs; DIBL effect; drain induced barrier lowering; short channel effects; short-channel AlGaAs/GaAs HFET; subthreshold swing; two-dimension Poissons equation; two-dimensional analytical subthreshold analysis; Analytical models; Degradation; Electrons; Gallium arsenide; HEMTs; Leakage current; MODFETs; Poisson equations; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283544

Filename

1283544