Title :
High K LAON for gate dielectric application
Author :
Zhou, Hongwei ; Xiaoping Wang ; Nguyen, Bich-yen ; Rai, Rajesh ; Prabhu, L. ; Jack Jiang ; Kaushik, Vidya ; Scheaffer, Jamie ; Zavala, Melissa ; Duda, Erika ; Liu, Ran ; Zonner, Stefan ; Hradsky, Bruce ; Fejes, Peter ; Theodore, David ; Edwards, Ginger ;
Author_Institution :
Digital DNA Lab., Motorola, Austin, TX, USA
Abstract :
A promising high k material, lanthanum aluminum oxynitride (LAON), with excellent material and electronic properties is reported. The LAON film has good thermal stability and CMOS process compatibility at 1000 C. The LAON material has a dielectric constant of above 20, bandgap of 6.6 eV. Well-behaved I-V and C-V were obtained for 80 A LAON on silicon.
Keywords :
CMOS integrated circuits; aluminium compounds; capacitance; dielectric materials; dielectric thin films; energy gap; lanthanum compounds; permittivity; surface roughness; thermal stability; 1000 C; 80 A; C-V properties; CMOS process compatibility; I-V properties; LaAlON; Si; bandgap; electronic properties; gate dielectric application; high dielectric constant materials; lanthanum aluminum oxynitride film; material properties; silicon surface; surface roughness; thermal stability; Aluminum; CMOS process; Capacitance-voltage characteristics; Dielectric constant; Dielectric materials; High K dielectric materials; High-K gate dielectrics; Lanthanum; Photonic band gap; Thermal stability;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Conference_Location :
Hong Kong, China
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283549
