Title :
The application one-dimensional and quasi one-dimensional Thomas-Fermi equation for the modelling of an intra-atomic potential in the ultrathin gate dielectric
Author :
Krasnikov, G.Ya.
Author_Institution :
Res. & Dev. Inst. for Molecular Electron., MICRON, Moscow, Russia
Abstract :
The statement of the one-dimensional Thomas-Fermi equation is considered. Its analytical solution is obtained. The procedure of adaptation of a solution of the three-dimensional Thomas-Fermi equation for an one-dimensional case is offered in connection with a problem of tunneling of charge carriers through ultrathin gate dielectric.
Keywords :
Thomas-Fermi model; dielectric materials; dielectric thin films; electron density; tunnelling; analytical solution; charge carrier tunneling; electron density; intraatomic potential modelling; one-dimensional Thomas-Fermi equation; quasi one-dimensional Thomas-Fermi equation; three-dimensional Thomas-Fermi equation; ultrathin gate dielectric materials; Atomic measurements; Boundary conditions; Dielectrics; Electrons; Elementary particle vacuum; Equations; Modems; Potential energy; Quantum computing; Quantum mechanics;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283550
