• DocumentCode
    2772868
  • Title

    Mathematical model of shaping of a ultrathin SiO2 layer at a high-temperature oxidation of silicon

  • Author

    Krasnikov, G.Ya.

  • Author_Institution
    Res. & Dev. Inst. for Molecular Electron., MICRON, Moscow, Russia
  • fYear
    2003
  • fDate
    16-18 Dec. 2003
  • Firstpage
    365
  • Lastpage
    368
  • Abstract
    On the grounds of beliefs about polymeric structure of a ultrathin silicon dioxide layer obtained by a rapid thermal oxidation (RTO) in a temperature range 950-115°C, the model of structure of a boundary layer in a system Si/SiO2 is offered. The semiquantitative analysis of a spatial distribution of polymetric compounds of different length in a boundary layer is carried out. The outcomes of model operation indirectly prove to be true by known experimental datas.
  • Keywords
    elemental semiconductors; interface structure; oxidation; rapid thermal processing; semiconductor process modelling; semiconductor thin films; silicon; silicon compounds; 950 to 1150 degC; Si-SiO2; Si/SiO2 system; boundary layer structure; mathematical model; polymeric structure; polymetric compounds; rapid thermal oxidation; semiquantitative analysis; silicon oxidation; ultrathin SiO2 layer; ultrathin silicon dioxide layer; Atomic layer deposition; Chemicals; Concrete; Lattices; Mathematical model; Oxidation; Polymers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
  • Print_ISBN
    0-7803-7749-4
  • Type

    conf

  • DOI
    10.1109/EDSSC.2003.1283551
  • Filename
    1283551
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2772868