DocumentCode
2772884
Title
Charge trapping and stress-induced dielectric breakdown characteristics of HfO2 films
Author
Zhan, Nian ; Ng, K.L. ; Poon, M.C. ; Wong, Hei ; Kok, C.W.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear
2003
fDate
16-18 Dec. 2003
Firstpage
369
Lastpage
372
Abstract
The reliability and integrity of HfO2 prepared by sputtering were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found that a significant charge trapping effect is found for very short stressing time (<30 s) but stress-induced trap generation is insignificant. Area and stress-voltage effects on the time-dependent dielectric breakdown (TDDB) were also studied. It was found that the Weibull shape factors for soft and hard breakdown are different and their values are 1.43 and 1.95, respectively. It suggests that the soft breakdown should have different precursor defects from those of the hard breakdown.
Keywords
Weibull distribution; dielectric materials; dielectric thin films; electric breakdown; electron traps; hafnium compounds; reliability; sputtered coatings; HfO2; HfO2 films; HfO2 integrity; TDDB; Weibull shape factors; charge trapping; current-stressing duration properties; current-voltage properties; reliability; sputtering; stress induced dielectric breakdown; stress-voltage effects; time dependent dielectric breakdown; Capacitance-voltage characteristics; Dielectric breakdown; Dielectric measurements; Electric breakdown; Hafnium oxide; Leakage current; MOS devices; Silicon; Sputtering; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN
0-7803-7749-4
Type
conf
DOI
10.1109/EDSSC.2003.1283552
Filename
1283552
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