• DocumentCode
    2772941
  • Title

    FTGMOS: A novel feedback thermal gradient MOS circuit model

  • Author

    Sandha, Gagandeep S. ; Singh, Pawan K. ; Nagchoudhuri, D.

  • Author_Institution
    Electron. & Electr. Commun. Eng., Punjab Eng. Coll., Chandigarh, India
  • fYear
    2003
  • fDate
    16-18 Dec. 2003
  • Firstpage
    387
  • Lastpage
    390
  • Abstract
    A novel hardware implementable model for MOS devices in an integrated circuit is proposed that negates the thermal effects. It applies a correction to the device whose magnitude varies in accordance with the amount of error introduced in the device due to thermal gradient. This model introduces corrections by a suitable circuit external to the device. The FTGMOS model can be applied to all the devices in an integrated circuit to obtain the circuit performance as if thermal effects are absent altogether.
  • Keywords
    MIS devices; integrated circuit modelling; monolithic integrated circuits; semiconductor device models; MOS devices; feedback thermal gradient MOS circuit model; hardware implementable model; integrated circuit; thermal effects; Circuit optimization; Feedback circuits; Heating; Integrated circuit modeling; Integrated circuit technology; MOS devices; Photonic band gap; Temperature distribution; Temperature sensors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
  • Print_ISBN
    0-7803-7749-4
  • Type

    conf

  • DOI
    10.1109/EDSSC.2003.1283556
  • Filename
    1283556