Title :
FTGMOS: A novel feedback thermal gradient MOS circuit model
Author :
Sandha, Gagandeep S. ; Singh, Pawan K. ; Nagchoudhuri, D.
Author_Institution :
Electron. & Electr. Commun. Eng., Punjab Eng. Coll., Chandigarh, India
Abstract :
A novel hardware implementable model for MOS devices in an integrated circuit is proposed that negates the thermal effects. It applies a correction to the device whose magnitude varies in accordance with the amount of error introduced in the device due to thermal gradient. This model introduces corrections by a suitable circuit external to the device. The FTGMOS model can be applied to all the devices in an integrated circuit to obtain the circuit performance as if thermal effects are absent altogether.
Keywords :
MIS devices; integrated circuit modelling; monolithic integrated circuits; semiconductor device models; MOS devices; feedback thermal gradient MOS circuit model; hardware implementable model; integrated circuit; thermal effects; Circuit optimization; Feedback circuits; Heating; Integrated circuit modeling; Integrated circuit technology; MOS devices; Photonic band gap; Temperature distribution; Temperature sensors; Threshold voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283556