• DocumentCode
    2772976
  • Title

    A new EST with dual trench gate electrode (DTG-EST)

  • Author

    Kim, Dae Won ; Kim, Dae Jong ; Kang, Ey Goo ; Sung, Man Young ; Rhie, Dong Hee

  • Author_Institution
    Dept. of Electr. Eng., Korea Univ., Seoul, South Korea
  • fYear
    2003
  • fDate
    16-18 Dec. 2003
  • Firstpage
    395
  • Lastpage
    398
  • Abstract
    In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. And the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73 V and 35 A/cm2, respectively. But the proposed DTG-EST exhibits snapback with the anode voltage and current density 0.96 V and 100 A/cm2, respectively.
  • Keywords
    current density; power MOSFET; semiconductor device models; thyristors; 0.96 V; 27.3 V; MOS gated power device; current density; device applications; dual trench gate electrode; emitter switched thyristor; parasitic thyristor; snap-back effect; Anodes; Cathodes; Current density; Electrodes; Insulated gate bipolar transistors; Low voltage; MOSFETs; Motor drives; Power electronics; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
  • Print_ISBN
    0-7803-7749-4
  • Type

    conf

  • DOI
    10.1109/EDSSC.2003.1283558
  • Filename
    1283558
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2772976