Title :
A new EST with dual trench gate electrode (DTG-EST)
Author :
Kim, Dae Won ; Kim, Dae Jong ; Kang, Ey Goo ; Sung, Man Young ; Rhie, Dong Hee
Author_Institution :
Dept. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. And the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73 V and 35 A/cm2, respectively. But the proposed DTG-EST exhibits snapback with the anode voltage and current density 0.96 V and 100 A/cm2, respectively.
Keywords :
current density; power MOSFET; semiconductor device models; thyristors; 0.96 V; 27.3 V; MOS gated power device; current density; device applications; dual trench gate electrode; emitter switched thyristor; parasitic thyristor; snap-back effect; Anodes; Cathodes; Current density; Electrodes; Insulated gate bipolar transistors; Low voltage; MOSFETs; Motor drives; Power electronics; Thyristors;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283558
