DocumentCode
2772994
Title
Power MOS having superior electrical characteristics
Author
Kim, D.J. ; Sung, M.Y. ; Kang, G.
Author_Institution
Dept. of Electr. Eng., Korea Univ., Seoul, South Korea
fYear
2003
fDate
16-18 Dec. 2003
Firstpage
399
Lastpage
402
Abstract
In this paper, a new size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET" (Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of proposed LTMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTMOSFET is 250V. Because the electrode of the proposed device are formed in trench oxide, the electricfield in the device are crowded to trench oxide.
Keywords
power MOSFET; 250 V; forward blocking; lateral trench electrode power MOSFET; power MOS; superior electrical properties; Breakdown voltage; Electric variables; Electrodes; Electrons; Fabrication; Intrusion detection; MOSFET circuits; Power MOSFET; Threshold voltage; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN
0-7803-7749-4
Type
conf
DOI
10.1109/EDSSC.2003.1283559
Filename
1283559
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