Title :
Power MOS having superior electrical characteristics
Author :
Kim, D.J. ; Sung, M.Y. ; Kang, G.
Author_Institution :
Dept. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
In this paper, a new size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET" (Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of proposed LTMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTMOSFET is 250V. Because the electrode of the proposed device are formed in trench oxide, the electricfield in the device are crowded to trench oxide.
Keywords :
power MOSFET; 250 V; forward blocking; lateral trench electrode power MOSFET; power MOS; superior electrical properties; Breakdown voltage; Electric variables; Electrodes; Electrons; Fabrication; Intrusion detection; MOSFET circuits; Power MOSFET; Threshold voltage; Voltage measurement;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283559
