DocumentCode :
2773
Title :
Unilateralization of MMIC Distributed Amplifiers
Author :
Nikandish, Gholamreza ; Medi, Ali
Author_Institution :
Dept. of Electr. Eng., Sharif Univ. of Technol., Tehran, Iran
Volume :
62
Issue :
12
fYear :
2014
fDate :
Dec. 2014
Firstpage :
3041
Lastpage :
3052
Abstract :
This paper presents an unilateralization technique for distributed amplifiers (DAs) based on the transformer coupling between the gate and drain lines. Theoretical analysis of the DA indicates that the voltage waves in the gate and drain lines can be described by a system of linear partial differential equations. The transformer coupling between the lines allows for cancellation of the reverse transmission coefficient of the system. There is an optimal value for the coupling coefficient between the lines that unilateralizes the DA. This optimal coupling coefficient is derived in terms of the gate-drain capacitance and capacitances of the gate and drain lines. Using the proposed technique, two monolithic microwave integrated circuit DAs are designed and implemented in a 0.1- μm GaAs pHEMT process. The first DA provides average gain of 10 dB and 3-dB bandwidth (BW) of 39 GHz. The amplifier exhibits the minimum noise figure (NF) of 2.3 dB and the maximum output 1-dB compression point ( P1 dB) of 14.0 dBm, while consuming 80 mW from a 2-V supply. The second amplifier, composed of two cascaded coupled-line DAs, provides average gain of 19.2 dB, 3-dB BW of 37.5 GHz, the minimum NF of 2.3 dB, and the maximum P1 dB of 12.6 dBm. It consumes 131 mW from a 2-V supply. The designed amplifiers can operate with supply voltages as low as 0.5 V to reduce power consumption, while their gain, BW, and NF are preserved. The maximum ratio of gain-bandwidth product to power consumption GBW/Pdc of 11.9 GHz/mW is provided by the cascaded DA.
Keywords :
MMIC amplifiers; coupled circuits; distributed amplifiers; gallium arsenide; high electron mobility transistors; integrated circuit design; linear differential equations; partial differential equations; transformers; GaAs; MMIC distributed amplifier; bandwidth 39 GHz; cascaded coupled-line DA; drain line; gain 10 dB; gain 3 dB; gate line; gate-drain capacitance; linear partial differential equation; monolithic microwave integrated circuit; noise figure 2.3 dB; optimal coupling coefficient; pHEMT process; power 131 mW; power 80 mW; reverse transmission coefficient; size 0.1 mum; transformer coupling; unilateralization technique; voltage 2 V; Capacitance; Couplings; Gain; Inductance; Logic gates; MMICs; Transistors; Broadband amplifier; distributed amplifier (DA); high electron-mobility transistor (HEMT); monolithic microwave integrated circuit (MMIC); transformer;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2014.2361341
Filename :
6928503
Link To Document :
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