Title :
Thermal stability of Ni monosilicide formed with Ti capping layer
Author :
Park, Soo-Jin ; Lee, Keun-Woo ; You, Jung-Joo ; Kim, Ju-Youn ; Bae, Kyoo-Sik
Abstract :
NiSi was formed with a Ti-capping layer to improve the thermal stability. Ni and Ti films were deposited and then annealed in the N2 ambient at 300-800°C in a RTA (rapid thermal annealing) system. Four point probe, FESEM, and AES were used to study the thermal properties of Ti-capped NiSi layers. The Ti-capped NiSi was stable up to 700°C for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600°C. The AES results revealed that the Ni diffusion further into the Si substrate was retarded by the capping layer, resulting in the suppression of agglomeration of NiSi films.
Keywords :
Auger electron spectra; chemical interdiffusion; field emission electron microscopy; nickel compounds; rapid thermal annealing; scanning electron microscopy; thermal stability; thin films; 100 s; 300 to 800 degC; AES; FESEM; Ni diffusion; Ni monosilicide compounds; Ni-Si; NiSi films agglomeration; RTA; Ti-Ni-Si; Ti-capping layer; annealing; four point probe; rapid thermal annealing; sheet resistance; thermal properties; thermal stability; Conductivity; Electrodes; MOSFET circuits; Probes; Rapid thermal annealing; Silicidation; Silicides; Temperature; Thermal resistance; Thermal stability;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283561
