DocumentCode
2773090
Title
Effects of annealing condition on thermal sensing characteristics of Ba1-xSrxTiO3 thin-film resistor
Author
Liu, Y.R. ; Lai, P.T. ; Li, B. ; Li, G.Q. ; Huang, M.Q.
Author_Institution
Dept. of Appl. Phys., South China Univ. of Technol., Guangzhou, China
fYear
2003
fDate
16-18 Dec. 2003
Firstpage
423
Lastpage
426
Abstract
Barium strontium titanate (Ba1-xSrxTiO3) thin-film resistor is fabricated on a SiO2/Si substrate by argon ion-beam sputtering technique. Thermal sensitivity characteristics of the resistor are investigated, and the results show that the thin-film resistor has good thermal sensitivity with negative temperature coefficient. Moreover, the effects of annealing condition on thermal sensing properties of the resistor are studied.
Keywords
annealing; barium compounds; ferroelectric materials; ferroelectric thin films; sensitivity; sputter deposition; strontium compounds; temperature sensors; thin film resistors; Ba1-xSrxTiO3; Ba1-xSrxTiO3 thin-film resistor; SiO2-Si; SiO2-Si substrate; annealing; argon ion-beam sputtering; negative temperature coefficient; thermal sensing; thermal sensitivity; Annealing; Argon; Barium; Resistors; Semiconductor thin films; Sputtering; Strontium; Substrates; Thermal resistance; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN
0-7803-7749-4
Type
conf
DOI
10.1109/EDSSC.2003.1283564
Filename
1283564
Link To Document