Title :
Existence of silicon oxynitride in silicon dioxide grown by rapid thermal oxidation in a mixture of N/sub 2//O/sub 2/
Author :
Ng, Alvin Chi-Hai ; Jun Xu ; Cheung, W.Y. ; Xu, Jun
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, China
Abstract :
Silicon oxide has been fabricated with oxide thickness as small as 42 /spl Aring/ by rapid thermal oxidation (RTO) in a mixture of N/sub 2/ and O/sub 2/. A dispersion shoulder at the low frequency end in Fourier transformed infrared spectroscopy (FTIR) explicitly shows the Si-O (TO/sub 3/) peak (transverse optical, asymmetric stretching), suggesting the presence of silicon oxynitride in the oxide.
Keywords :
Fourier transform spectra; gas mixtures; infrared spectra; nitrogen; oxidation; oxygen; rapid thermal processing; silicon compounds; 42 /spl Aring/; FTIR spectra; Fourier transformed infrared spectra; N/sub 2/-O/sub 2/; N/sub 2/-O/sub 2/ mixture; SiO/sub 2/; SiON; asymmetric stretching; optical stretching; rapid thermal oxidation; silicon dioxide; silicon oxide; silicon oxynitride; Acoustic reflection; Ellipsometry; Heating; Infrared detectors; Infrared spectra; Nitrogen; Optical reflection; Oxidation; Silicon compounds; Thickness measurement;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Conference_Location :
Hong Kong, China
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283567
