Title :
Room temperature CW operation of GaInP/AlGaInP multiple quantum wire visible lasers (MQWR-LD)
Author :
Yoshida, Junji ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Abstract :
The first successful room temperature (r.t.) CW operation of GaInP/AlGaInP multiple quantum wire visible lasers was obtained, with the maximum CW temperature of 70°C. For uncoated facet condition at 20°C, the threshold current density (Jth) was 294 A/cm2, the output power 50 mW/facet, and the differential quantum efficiency 37%. The low pulse Jth value of 277 A/cm2 was obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; quantum well lasers; 20 C; 298 K; 37 percent; 70 C; CW operation; GaInP-AlGaInP; GaInP/AlGaInP; differential quantum efficiency; low pulse Jth value; multiple quantum wire visible lasers; output power; room temperature; threshold current density; uncoated facet condition; Capacitive sensors; Laser modes; Laser theory; Power generation; Power lasers; Quantum mechanics; Quantum well devices; Temperature dependence; Threshold current; Wire;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519140
