• DocumentCode
    2773440
  • Title

    Room temperature CW operation of GaInP/AlGaInP multiple quantum wire visible lasers (MQWR-LD)

  • Author

    Yoshida, Junji ; Kishino, Katsumi

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
  • fYear
    1994
  • fDate
    19-23 Sep 1994
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    The first successful room temperature (r.t.) CW operation of GaInP/AlGaInP multiple quantum wire visible lasers was obtained, with the maximum CW temperature of 70°C. For uncoated facet condition at 20°C, the threshold current density (Jth) was 294 A/cm2, the output power 50 mW/facet, and the differential quantum efficiency 37%. The low pulse Jth value of 277 A/cm2 was obtained
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; quantum well lasers; 20 C; 298 K; 37 percent; 70 C; CW operation; GaInP-AlGaInP; GaInP/AlGaInP; differential quantum efficiency; low pulse Jth value; multiple quantum wire visible lasers; output power; room temperature; threshold current density; uncoated facet condition; Capacitive sensors; Laser modes; Laser theory; Power generation; Power lasers; Quantum mechanics; Quantum well devices; Temperature dependence; Threshold current; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1994., 14th IEEE International
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-1754-8
  • Type

    conf

  • DOI
    10.1109/ISLC.1994.519140
  • Filename
    519140
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2773440