Title :
Threshold current and modulation dynamics in quantum dot lasers
Author :
Nakayama, H. ; Arakawa, Y.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
Threshold current and modulation dynamics are theoretically discussed taking into account the detailed behavior of carrier dynamics related to the bottleneck problem. The results indicate that extremely low threshold current and high modulation frequency devices can be realized if the quantum dot structure is correctly designed
Keywords :
optical modulation; semiconductor lasers; semiconductor quantum dots; bottleneck problem; carrier dynamics; modulation dynamics; quantum dot lasers; quantum dot structure; threshold current; Bandwidth; Electron emission; Energy states; Mirrors; Optical modulation; Quantum dot lasers; Quantum dots; Reflectivity; Threshold current; US Department of Transportation;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519142
