DocumentCode :
2773621
Title :
Modeling of CdZnTe and CIGS and tandem solar cells
Author :
Xiao, Y.G. ; Li, Z. M Simon ; Lestrade, M. ; Li, Z. M. Simon
Author_Institution :
Crosslight Software Inc., Burnaby, BC, Canada
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Based on Crosslight APSYS, single junction CdZnTe and CIGS solar cells as well as two-terminal CdZnTe/CIGS tandem cells with tunnel junction are modeled. Basic physical quantities like band diagrams, optical absorption and generation are obtained. Quantum efficiency and I-V curves are presented. The results are discussed with respect to the interface recombination velocity, the related material defect trap states and the top TCO layer affinity. The projected efficiency obtained is 26% for the modeled two-terminal CZT/CIGS tandem cell. The modeling results give possible clues for developing related tandem solar cells with enhanced efficiency.
Keywords :
cadmium compounds; light absorption; solar cells; tellurium compounds; zinc compounds; CdZnTe; interface recombination velocity; material defect trap state; optical absorption; optical generation; tandem solar cell; tunnel junction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5616486
Filename :
5616486
Link To Document :
بازگشت