Title :
Buried InGaP/GaAs grating distributed feedback laser with AlGaAs cladding
Author :
Stevens, Benjamin J. ; Groom, Kristian M. ; Childs, David T D ; Roberts, John S. ; Hogg, Richard A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
We report on a DFB laser technology for GaAs based lasers. Such a structure is normally problematic to achieve due to overgrowth on Al containing layers. Our technique is to use an InGaP/GaAs grating layer in conjunction with AlGaAs cladding layers, where the AlGaAs is never exposed to air. Due to the high refractive index contrast of InGaP/GaAs, the grating layer is ~450 nm from the active layer, which helps in minimising any deleterious effects of the re-growth process on laser performance. The initial structure was grown by MOVPE process. The epitaxial structure was designed by modelling confinement factors in a commercial refractive index mode solver.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; claddings; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; refractive index; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; AlGaAs; DFB laser technology; InGaP-GaAs; MOVPE; cladding layers; distributed feedback laser; epitaxial structure; grating layer; re-growth process; refractive index mode solver; Distributed feedback devices; Gallium arsenide; Gratings; III-V semiconductor materials; Laser feedback; Manufacturing; Quantum dot lasers; Refractive index; Semiconductor lasers; Wet etching;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5191459
