DocumentCode
2773948
Title
Improved performance of semiconductor ring lasers with multi-mode interference output couplers
Author
Krauss, T. ; Laybourn, P.J.R. ; DeLaRue, R.M.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
1994
fDate
19-23 Sep 1994
Firstpage
87
Lastpage
88
Abstract
We present strip-loaded ring lasers in GaAs/AlGaAs that operate with a threshold current of 140 mA for a total pumped device length of 4.5 mm and a quantum efficiency of 7% (per output), to our knowledge the highest efficiency for such lasers reported to date
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical couplers; ring lasers; semiconductor lasers; 140 mA; 4.5 mm; 7 percent; GaAs-AlGaAs; GaAs/AlGaAs; multi-mode interference output couplers; quantum efficiency; semiconductor ring lasers; strip-loaded ring lasers; threshold current; Couplers; Interference; Laser feedback; Laser mode locking; Laser modes; Laser transitions; Optical coupling; Ring lasers; Semiconductor lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519147
Filename
519147
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