Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method

We have deposited cluster-free P-doped a-Si:H films using SiH₄+PH₃ multi-hollow discharge plasma CVD method. We have measured dependence of a deposition rate and SiH emission intensity on a gas flow rate ratio R=[PH₃]/[SiH₄]. The increase of deposition rate with R is much larger than that of SiH emission intensity. These results suggest PH_x radicals enhance surface reaction probability of SiH₃ radicals. The P concentration in the films can be controlled by the gas flow rate ratio for R<;5%. We have succeeded in depositing P-doped a-Si:H films of a low stabilized defect density of 2.9 × 10¹⁵ cm^-3. The conductivity of the films is lower than that of the conventional films. Other optoelectronic properties such as conductivity, its activation energy, and bandgap energy are value ranges of the conventional films.