DocumentCode
2774115
Title
Reduction of size fluctuation effect in GaInAs/GaInAsP quantum-box lasers using tensile-strained active region
Author
Hirayama, Hideki ; Asada, Masahiro
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
fYear
1994
fDate
19-23 Sep 1994
Firstpage
89
Lastpage
90
Abstract
The authors show theoretically the reduction of the quantum-box (QB) size fluctuation effect in GaInAs/GaInAsP QB lasers using a tensile-strained active region. The tensile-strained QB laser is shown to be highly advantageous for a 1.5 μm low threshold laser
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; semiconductor lasers; semiconductor quantum dots; size effect; 1.5 mum; GaInAs/GaInAsP; GaInP-GaInAsP; low threshold laser; quantum-box lasers; size fluctuation effect; tensile-strained active region; Capacitive sensors; Charge carrier processes; Fluctuations; Indium phosphide; Optical coupling; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519148
Filename
519148
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