DocumentCode
2774288
Title
Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy
Author
Lammert, R.M. ; Cockerill, T.M. ; Forbes, D.V. ; Smith, G.M. ; Coleman, J.J.
Author_Institution
Mater. Res. Lab., Illinois Univ., Urbana, IL, USA
fYear
1994
fDate
19-23 Sep 1994
Firstpage
91
Lastpage
92
Abstract
Submilliampere threshold strained-layer InGaAs-GaAs-AlGaAs single quantum well buried heterostructure lasers grown by selective-area MOCVD are described. Low threshold currents, high differential slope efficiencies and high output powers are reported
Keywords
III-V semiconductors; chemical vapour deposition; epitaxial growth; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; semiconductor growth; InGaAs-GaAs-AlGaAs; InGaAs/GaAs single quantum well lasers; high differential slope efficiencies; high output powers; low threshold currents; selective-area MOCVD; selective-area epitaxy; strained-layer; submilliampere threshold buried-heterostructure single quantum well lasers; Chemical lasers; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Laboratories; Laser modes; Laser tuning; Pulsed laser deposition; Quantum well lasers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519149
Filename
519149
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