Title :
Carrier transport properties of flash-lamp-crystallized poly-Si films
Author :
Ohdaira, Keisuke ; Nishikawa, Takuya ; Ishii, Shohei ; Tomura, Naohito ; Matsumura, Hideki
Author_Institution :
Japan Adv. Inst. of Sci. & Technol. (JAIST), Ishikawa, Japan
Abstract :
We have investigated carrier transport properties of μm-order-thick polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of precursor amorphous Si (a-Si) films on glass substrates. The Hall mobility of flash-lamp-crystallized (FLC) poly-Si films decreases as doping concentration increases, and then reversely increase with further increase in doping concentration, both in the cases of p- and n-type poly-Si films. The tendency observed is characteristic of poly-Si materials having a number of grain boundaries at which carriers are trapped. N2-atmosphere furnace annealing of FLC poly-Si films with low doping concentration significantly recovers their carrier concentration and improve their carrier mobility up to more than 10 cm2/Vs, which is probably because of the termination of the trapping states by hydrogen (H) atoms that exists in FLC poly-Si films on the order of 1021/cm3. The realized mobility of FLC poly-Si films exceeds those of conventional chemical-vapor-deposited (CVD) microcrystalline Si (μc-Si) films, and the remarkable carrier transport properties would lead to effective carrier collection and resulting high quantum efficiency of FLC poly-Si solar cells.
Keywords :
carrier mobility; elemental semiconductors; grain boundaries; incoherent light annealing; silicon; solar cells; substrates; FLC poly-Si solar cells; Hall mobility; Si; carrier mobility; carrier transport properties; flash lamp annealing; flash-lamp-crystallized poly-Si films; glass substrates; grain boundaries; precursor amorphous films;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5616526