Title :
A comprehensive analytical capacitance model of a two dimensional nanodot array [cellular neural net application]
Author :
Basu, Anirban ; Lin, Sheng-Chih ; Wasshuber, Christoph ; Ionescu, Adrian M. ; Banedee, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
This paper introduces a new comprehensive analytical capacitance model for nanoscale architectures based on nanoscale metallic/semiconducting dots. The model takes into account a detailed charge interaction of the components and shows their implications on power and performance with reference to a nanoscale cellular neural network (CNN) without any loss of generality. Our proposed model, as opposed to a numerical simulator, provides an analytical technique to perform a quick but an accurate estimate of the functional capacitances and thereby evaluate some key performance parameters such as switching delay, power dissipation and energy-delay product of a CNN, or in general a nanodot based circuit. Moreover, this model can be used as a guideline to determine the boundary of transition from continuous charge to discrete charge regimes in nanodot based electronic implementations.
Keywords :
Boolean functions; capacitance; cellular neural nets; charge transfer states; coupled circuits; nanoelectronics; network analysis; semiconductor quantum dots; 2D nanodot array; Boolean logic implementation; CNN; analytical capacitance model; cellular neural network; charge interaction; continuous/discrete charge transition boundary; energy-delay product; functional capacitances; nanodot based circuit; nanoscale architectures; nanoscale metallic/semiconducting dots; power dissipation; switching delay; Analytical models; Capacitance; Cellular neural networks; Circuit simulation; Delay estimation; Neural networks; Numerical simulation; Performance analysis; Performance loss; Semiconductivity;
Conference_Titel :
Quality Electronic Design, 2004. Proceedings. 5th International Symposium on
Print_ISBN :
0-7695-2093-6
DOI :
10.1109/ISQED.2004.1283683