DocumentCode :
2774551
Title :
A reflectance spectroscopy-based tool for high-speed characterization of silicon wafers and solar cells in commercial production
Author :
Sopori, B. ; Rupnowski, P. ; Guhabiswas, D. ; Devayajanam, S. ; Shet, S. ; Khattak, C.P. ; Albert, M.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Some new applications of reflectance spectroscopy using the GT FabScan are described, which make this system highly desirable for process monitoring in commercial Si solar cell fabrication. These applications include grain orientation, grain size distribution, dislocation density distribution, and antireflection coating thickness on a finished solar cell. These measurements are performed very fast, typically in less than 10 ms over the entire wafer.
Keywords :
elemental semiconductors; reflectivity; silicon; solar cells; GT FabScan; Si; Si fabrication; reflectance spectroscopy; silicon wafers; solar cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5616540
Filename :
5616540
Link To Document :
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