DocumentCode
2774710
Title
Extremely small active stripe laser diodes (EXSAS-LDs) for 17-channel low threshold array
Author
Kitamura, Shotaro ; Asaki, Tatsuya S. ; Komatsu, Keiro ; Kitamura, Mitsuhiro
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fYear
1994
fDate
19-23 Sep 1994
Firstpage
95
Lastpage
96
Abstract
Summary form only given. Uniform 17-channel array of low threshold (3.5 mA, av.). 1.3 μm wavelength lasers was realized with submicron wide bulk active layers grown by selective MOVPE technique
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fabrication; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; 1.3 mum; 1.8 mA; 17-channel low threshold array; InGaAsP; InGaAsP active layer; extremely small active stripe laser diodes; low threshold; selective MOVPE technique; submicron wide bulk active layers; wavelength lasers; Diodes; Epitaxial growth; Epitaxial layers; High speed optical techniques; Optical arrays; Optical control; Optical device fabrication; Semiconductor laser arrays; Temperature dependence; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519151
Filename
519151
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