Title :
High temperature and reliable operation of 630 nm-band InGaAlP tensile-strained multiquantum-well laser diodes
Author :
Watanabe, Minoru ; Matsuura, Hatsumi ; Shimada, Naohiro ; Okuda, Hajime
Author_Institution :
Semicond. Group, Toshiba Corp., Kawasaki, Japan
Abstract :
Summary form only given. High temperature and reliable operation of 635 nm tensile strained InGaP multiquantum-well laser diodes has been achieved. An output power level of 10 mW was sustainable up to 80°C and stable operation of over 1000 hours, for an output of 5 mW, at 50°C, was observed
Keywords :
III-V semiconductors; ageing; aluminium compounds; deformation; gallium compounds; indium compounds; laser stability; optical testing; quantum well lasers; semiconductor device reliability; semiconductor device testing; 10 nW; 1000 h; 5 mW; 50 C; 630 nm; 630 nm-band; 635 nm; 80 C; InGaAlP; InGaAlP tensile-strained multiquantum-well laser diodes; InGaP; InGaP multiquantum-well laser diodes; high temperature operation; output power level; reliable operation; stable operation; tensile strained; Aging; Degradation; Electrons; Laser stability; Laser theory; Lattices; Life testing; Quantum well devices; Temperature; Tensile strain;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519153
