DocumentCode
2775059
Title
High temperature and reliable operation of 630 nm-band InGaAlP tensile-strained multiquantum-well laser diodes
Author
Watanabe, Minoru ; Matsuura, Hatsumi ; Shimada, Naohiro ; Okuda, Hajime
Author_Institution
Semicond. Group, Toshiba Corp., Kawasaki, Japan
fYear
1994
fDate
19-23 Sep 1994
Firstpage
99
Lastpage
100
Abstract
Summary form only given. High temperature and reliable operation of 635 nm tensile strained InGaP multiquantum-well laser diodes has been achieved. An output power level of 10 mW was sustainable up to 80°C and stable operation of over 1000 hours, for an output of 5 mW, at 50°C, was observed
Keywords
III-V semiconductors; ageing; aluminium compounds; deformation; gallium compounds; indium compounds; laser stability; optical testing; quantum well lasers; semiconductor device reliability; semiconductor device testing; 10 nW; 1000 h; 5 mW; 50 C; 630 nm; 630 nm-band; 635 nm; 80 C; InGaAlP; InGaAlP tensile-strained multiquantum-well laser diodes; InGaP; InGaP multiquantum-well laser diodes; high temperature operation; output power level; reliable operation; stable operation; tensile strained; Aging; Degradation; Electrons; Laser stability; Laser theory; Lattices; Life testing; Quantum well devices; Temperature; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519153
Filename
519153
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