Junction analysis of selenized CuInSe2 solar cells

CuInSe₂ solar cells (run 489B) fabricated by the selenization of metallic layers show several favorable features in the diode junction characteristics. At any selected voltage, the forward current, defined in the light as measured current plus photocurrent, is smaller than that reported from other CuInSe₂ cells. Thus voltages near 400 mV at maximum power and near 500 mV at open circuit are attained. The reduced forward current results from a combination of (1) a small diode quality factor of 1.5, (2) near-superposition of light and dark curves, and (3) CuInSe₂ hole density as high as 7×10¹⁶ cm^-3. Both current and capacitance results suggest progress in reducing the density of extraneous bandgap states