Title :
Junction analysis of selenized CuInSe2 solar cells
Author :
Liu, X.X. ; Sasala, R.A. ; Sites, J.R.
Author_Institution :
Dept. of Phys., Colorado State Univ., Fort Collins, CO, USA
Abstract :
CuInSe2 solar cells (run 489B) fabricated by the selenization of metallic layers show several favorable features in the diode junction characteristics. At any selected voltage, the forward current, defined in the light as measured current plus photocurrent, is smaller than that reported from other CuInSe2 cells. Thus voltages near 400 mV at maximum power and near 500 mV at open circuit are attained. The reduced forward current results from a combination of (1) a small diode quality factor of 1.5, (2) near-superposition of light and dark curves, and (3) CuInSe2 hole density as high as 7×1016 cm-3. Both current and capacitance results suggest progress in reducing the density of extraneous bandgap states
Keywords :
copper compounds; indium compounds; solar cells; ternary semiconductors; CuInSe2 solar cells; capacitance; diode junction characteristics; extraneous bandgap states; forward current; hole density; junction analysis; maximum power; metallic layers; open circuit; selenization; semiconductor; small diode quality factor; Current measurement; Data analysis; Diodes; Electrical resistance measurement; Lighting; Photovoltaic cells; Power measurement; Q factor; Temperature measurement; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169345
