A versatile BiCMOS technology for mixed-signal and power applications

Author

Hutter, L. ; Smith, J. ; Erdeljac, J. ; Goon, J.

Author_Institution

Linear Products Div., Texas Instr. Inc., Dallas, TX, USA

fYear

1992

fDate

33651

Firstpage

42461

Lastpage

42466

Abstract

Describes a versatile analog BiCMOS process, merging 20 V bipolar and nominal 10 V CMOS transistors, as well as a large assortment of passive components, and manufactured using 2.0 micron feature sizes. The authors describe the BiCMOS process integration issues, active and passive component information, reliability design considerations, and mixed-signal device isolation issues. Several of the modular extensions to the baseline process, adding high-voltage, high-speed, and power elements to the list of available components are covered. Future technology issues are briefly discussed

Keywords

BIMOS integrated circuits; application specific integrated circuits; circuit reliability; integrated circuit technology; power integrated circuits; 2.0 micron; CMOS transistors; analog BiCMOS process; bipolar transistors; mixed-signal device isolation issues; modular extensions; passive components; power applications; process integration issues; reliability design considerations;

fLanguage

English

Publisher

iet

Conference_Titel

Technology and Application of Combined Bi-Polar and CMOS Semiconductor Processes, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

170056

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=277522