DocumentCode
2775270
Title
High efficiency visible single mode laser diodes
Author
Geels, Randall S. ; Plano, William E. ; Welch, David F.
Author_Institution
Spectra Diode Labs., San Jose, CA, USA
fYear
1994
fDate
19-23 Sep 1994
Firstpage
101
Lastpage
102
Abstract
We report low threshold and high efficiency operation of 660 nm band single mode InGaP QW laser diodes. The threshold currents are as low as 13 mA. External differential quantum efficiencies greater than 80% are reported
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser modes; quantum well lasers; 13 mA; 660 nm; 80 percent; InGaP; external differential quantum efficiencies; high efficiency operation; high efficiency visible single mode laser diodes; low threshold; quantum well lasers; single mode InGaP QW laser diodes; threshold currents; Coatings; Diode lasers; Laboratories; Laser modes; Power lasers; Printing; Quantum well lasers; Temperature; Testing; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519154
Filename
519154
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