Title :
Growth of high quality Cu2ZnSnS4 thin films on GaN by co-evaporation
Author :
Lui, H.F. ; Leung, K.K. ; Fong, W.K. ; Surya, C.
Author_Institution :
Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., Hong Kong, China
Abstract :
We report on the growth of high quality Cu2ZnSnS4 (CZTS) thin films on GaN-on-sapphire (GOS) substrates by thermal co-evaporation. Structural characterization was performed by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The results are compared to films grown by thermal co-evaporation on glass and those synthesized by the sulfurization of stacked precursors on glass. Our results show that single phase epitaxial quality CZTS films with improved crystallinity can be grown on GOS substrates. The optical and electrical properties such as optical transmission, carrier concentration and Hall mobilities of the films are also reported.
Keywords :
Hall mobility; III-V semiconductors; X-ray diffraction; carrier density; copper compounds; electric properties; epitaxial growth; evaporation; gallium compounds; optical properties; sapphire; substrates; thin films; tin compounds; transmission electron microscopy; wide band gap semiconductors; zinc compounds; Al2O3; CZTS thin films; Cu2ZnSnS4; GaN; GaN-on-sapphire substrates; Hall mobility; TEM; X-ray diffraction; XRD; carrier concentration; crystallinity; electrical properties; optical properties; optical transmission; single phase epitaxial quality CZTS films; sulfurization; thermal co-evaporation; thin film growth; transmission electron microscopy;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5616592
