DocumentCode :
2775636
Title :
Stressed nanomechanical resonator fabrication utilizing stiction phenomena
Author :
Ashiba, Hiroki ; Kometani, Reo ; Warisawa, Shin-ichi ; Ishihara, Sunao
Author_Institution :
Dept. of Mech. Eng., Univ. of Tokyo, Tokyo, Japan
fYear :
2011
fDate :
7-10 Aug. 2011
Firstpage :
1333
Lastpage :
1338
Abstract :
A simple fabrication method of stressed nanomechanical resonators utilizing stiction phenomena was proposed. Two parallel beams of 50 μm long, 120 nm wide, and 65 nm thick were fabricated with a wet etching process, and then the beams stuck to each other during drying and formed a stiction resonator. The stiction resonators were under a tensile stress state owing to the deformation of the beams. Vibration characteristics of the stiction resonators were experimentally evaluated with a measurement technique utilizing an electron beam. Higher resonant frequencies and Q-factors were obtained from the stiction resonators of the larger deformation. The evaluation result revealed the presence of the tensile stress in the resonators. The stress state of the stiction resonators was theoretically analyzed. Also, numerical analyses of the stiction resonators with a finite element method were conducted. From the analyses, the tensile stress applied to the stiction resonators was calculated to be up to 300 MPa.
Keywords :
beams (structures); deformation; drying; etching; finite element analysis; nanoelectromechanical devices; nanofabrication; resonators; stiction; tensile strength; beams; deformation; drying; electron beam; finite element method; stiction resonators; stressed nanomechanical resonator fabrication; tensile stress state; vibration characteristics; wet etching process; Fabrication; Finite element methods; Force; Tensile stress; Vibrations; Wet etching; Nano Fabrication; Nanomechanical Resonator; Stiction; Vibration characteristics enhancement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mechatronics and Automation (ICMA), 2011 International Conference on
Conference_Location :
Beijing
ISSN :
2152-7431
Print_ISBN :
978-1-4244-8113-2
Type :
conf
DOI :
10.1109/ICMA.2011.5985855
Filename :
5985855
Link To Document :
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