Title :
First studies of the impact of dose radiation on the electromagnetic susceptibility of bipolar transistors
Author :
Jarrix, S. ; Dusseau, L. ; Chatry, N. ; Hoffinann, P. ; Doridant, A. ; Blain, A. ; Dubois, T. ; Raoult, J. ; Calvel, P.
Author_Institution :
Inst. d´´Electron. du Sud (IES), Montpellier, France
Abstract :
Space or military electronic components are subject to both electromagnetic susceptibility and ionizing dose. Synergy effects should therefore be considered at early stages of component design. This paper deals with the susceptibility to high frequency signals in the 600 MHz-1 GHz frequency range of electronic voltage comparators subject to ionizing dose. The comparators come into two batches: non-irradiated and irradiated by ionizing dose with a cobalt 60 source. Both initial and irradiated devices are subject to an electromagnetic interference in the near-field zone. A comparison of the output voltage on both batches shows that ionizing can drastically affect electromagnetic susceptibility. In order to gain in-depth knowledge in electromagnetic susceptibility - dose radiation synergy, a methodology for discrete components and complex circuits is proposed.
Keywords :
UHF bipolar transistors; comparators (circuits); electromagnetic interference; bipolar transistor; electromagnetic interference; electromagnetic susceptibility; electronic voltage comparator; frequency 600 MHz to 1 GHz; ionizing dose radiation; irradiated comparator; military electronic component; nonirradiated comparator; space electronic component; synergy effect; Bipolar transistors; Cobalt; Electromagnetic interference; Electromagnetics; Electronic components; Radiation effects; bipolar-transistor-based comparators; electromagnetic susceptibility; near-field; space irradiation;
Conference_Titel :
Test Workshop (LATW), 2011 12th Latin American
Conference_Location :
Porto de Galinhas
Print_ISBN :
978-1-4577-1489-4
DOI :
10.1109/LATW.2011.5985894