DocumentCode
2776406
Title
Analysis of SEU parameters for the study of SRAM cells reliability under radiation
Author
Castellani-Coulié, K. ; Portal, J.-M. ; Micolau, G. ; Aziza, H.
Author_Institution
IM2NP, Univ. Aix-Marseille, Marseille, France
fYear
2011
fDate
27-30 March 2011
Firstpage
1
Lastpage
5
Abstract
A simplified RC circuit is used to simulate the effects of ionizing particles in a 90nm SRAM. The main characteristic of the memory cell bit flip are discussed and compared for characteristic parameters. The effect of the surrounded circuit on the impacted transistor is discussed in order to extract parameters characteristic of the SEU occurrence.
Keywords
SRAM chips; integrated circuit reliability; SEU parameters; SRAM cells reliability; impacted transistor; ionizing particles; memory cell bit flip; simplified RC circuit; single event upset; size 90 nm; surrounded circuit; Capacitance; Integrated circuit modeling; Random access memory; Single event upset; Solid modeling; Three dimensional displays; Transistors; Critical Charge; SRAM; Single Event Upset; TCAD simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Workshop (LATW), 2011 12th Latin American
Conference_Location
Porto de Galinhas
Print_ISBN
978-1-4577-1489-4
Type
conf
DOI
10.1109/LATW.2011.5985895
Filename
5985895
Link To Document