Title :
Ultrafast dynamics in waveguide saturable absorbers
Author :
Uskov, A.V. ; Karin, J.R. ; Nagarajan, R. ; Bowers, J.E. ; Mørk, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Summary form only given. The results of a model of differential transmission measurements in GaAs-GaAlAs waveguide saturable absorbers indicate that high field effects, spectral hole burning and carrier heating are important mechanisms governing absorption dynamics
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high field effects; high-speed optical techniques; laser mode locking; optical saturable absorption; optical waveguides; semiconductor device models; GaAs-GaAlAs; GaAs-GaAlAs waveguide saturable absorbers; absorption dynamics; carrier heating; differential transmission measurements; high field effects; spectral hole burning; ultrafast dynamics; waveguide saturable absorbers; Absorption; Equations; Laser mode locking; Optical pulses; Optical waveguides; Pulse measurements; Resistance heating; Semiconductor lasers; Solid lasers; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519162
