• DocumentCode
    2777285
  • Title

    Quantum confinement in the photoluminescence of nanocrystalline porous silicon

  • Author

    Stavarache, I. ; Ciurea, M.L. ; Iancu, V.

  • Author_Institution
    National Inst. of Mater. Phys., Bucharest, Romania
  • Volume
    1
  • fYear
    2005
  • fDate
    3-5 Oct. 2005
  • Firstpage
    55
  • Abstract
    The paper presents the photoluminescence of nanocrystalline porous silicon. Two maxima were observed for rather fresh samples, one located at the infrared edge of the visible range and the other one in red. After ageing, the first maximum vanishes, suggesting its relation with the surface states, while the red one undergoes a significant blue shift. A simple quantum confinement model allows to correlate the photon energy of the red maximum with a transition between two confinement levels and to interpret the blue shift in terms of size reduction by oxidation. These results are in good agreement with previous microstructure measurements.
  • Keywords
    ageing; elemental semiconductors; infrared spectra; nanostructured materials; oxidation; porous materials; silicon; spectral line shift; surface states; visible spectra; Si; ageing; blue shift; oxidation; photoluminescence; photon energy; quantum confinement; surface states; Biomedical optical imaging; Biosensors; Microstructure; Oxidation; Photoluminescence; Physics; Potential well; Scanning electron microscopy; Silicon; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
  • Print_ISBN
    0-7803-9214-0
  • Type

    conf

  • DOI
    10.1109/SMICND.2005.1558708
  • Filename
    1558708