DocumentCode
2777285
Title
Quantum confinement in the photoluminescence of nanocrystalline porous silicon
Author
Stavarache, I. ; Ciurea, M.L. ; Iancu, V.
Author_Institution
National Inst. of Mater. Phys., Bucharest, Romania
Volume
1
fYear
2005
fDate
3-5 Oct. 2005
Firstpage
55
Abstract
The paper presents the photoluminescence of nanocrystalline porous silicon. Two maxima were observed for rather fresh samples, one located at the infrared edge of the visible range and the other one in red. After ageing, the first maximum vanishes, suggesting its relation with the surface states, while the red one undergoes a significant blue shift. A simple quantum confinement model allows to correlate the photon energy of the red maximum with a transition between two confinement levels and to interpret the blue shift in terms of size reduction by oxidation. These results are in good agreement with previous microstructure measurements.
Keywords
ageing; elemental semiconductors; infrared spectra; nanostructured materials; oxidation; porous materials; silicon; spectral line shift; surface states; visible spectra; Si; ageing; blue shift; oxidation; photoluminescence; photon energy; quantum confinement; surface states; Biomedical optical imaging; Biosensors; Microstructure; Oxidation; Photoluminescence; Physics; Potential well; Scanning electron microscopy; Silicon; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Print_ISBN
0-7803-9214-0
Type
conf
DOI
10.1109/SMICND.2005.1558708
Filename
1558708
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