Title :
Phase Evalution in the Phosphorous-rich Layer Formation for SnAgCu/Ni-P Join
Author :
Lin, Y.C. ; Wang, K.J. ; Duh, J.G.
Abstract :
In microelectronic package, interfacial reaction between solders and under bump metallizations (UBM) is very important in the joint reliability. In this study, interfacial morphologies and microstructure of Sn-3Ag-0.5Cu/Ni-P UBM with various phosphorous contents were investigated by field emission electron probe microanalyzer (FE-EPMA). Through contrast control technique in the BEI mode along with series of quantitative analysis phase evolution of P-rich layers was investigated. In addition, a possible formation mechanism of Ni2SnP layer was proposed.
Keywords :
chemical analysis; copper alloys; field emission electron microscopy; integrated circuit packaging; integrated circuit reliability; interface structure; metallisation; nickel alloys; phosphorus alloys; silver alloys; solders; tin alloys; FE-EPMA; Ni2SnP; P-rich layers; SnAgCu-Ni-P; UBM microstructure; contrast control technique; field emission electron probe microanalyzer; interfacial morphologies; interfacial reaction; joint reliability; microelectronic package; microstructure; phosphorous-rich layer formation; quantitative analysis phase evolution; solders; under bump metallizations; Electron emission; Metallization; Microelectronics; Microstructure; Morphology; Packaging; Probes;
Conference_Titel :
Electronic Materials and Packaging, 2006. EMAP 2006. International Conference on
Conference_Location :
Kowloon
Print_ISBN :
978-1-4244-0834-4
Electronic_ISBN :
978-1-4244-0834-4
DOI :
10.1109/EMAP.2006.4430658
