DocumentCode :
2777989
Title :
Processes controlling the rate of In2O3 thin film gas sensor´s response
Author :
Korotcenkov, G. ; Brinzari, V. ; Ivanov, M. ; Blinov, I. ; Stetter, J.
Author_Institution :
Lab. of Micro- & Optoelectronics, Technical Univ. of Moldova, Moldova
Volume :
1
fYear :
2005
fDate :
3-5 Oct. 2005
Firstpage :
209
Abstract :
The kinetics of gas response to reducing and oxidizing gases of In2O3-based thin film gas sensors is analyzed in this report. The influence of operating temperature, air humidity and film thickness (d from 20 to 400 nm) on both the Eact and time constants of gas response is reviewed. Model conceptions allowing to explain specific character of In2O3 interaction with reducing and oxidizing gases are proposed.
Keywords :
gas sensors; humidity; indium compounds; oxidation; reduction (chemical); semiconductor thin films; 20 to 400 nm; In2O3; air humidity; film thickness; gas response; operating temperature; thin film gas sensor; time constants; Atmosphere; Atmospheric measurements; Gas detectors; Gases; Humidity; Kinetic theory; Process control; Shape; Steady-state; Thin film sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Print_ISBN :
0-7803-9214-0
Type :
conf
DOI :
10.1109/SMICND.2005.1558749
Filename :
1558749
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2777989
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