An Overview of Semiconductor Technologies and Circuits for Terahertz Communication Applications

Author

Rieh, Jae-Sung ; Kim, Dong-Hyun

Author_Institution

Sch. of Electr. Eng., Korea Univ., Seoul, South Korea

fYear

2009

fDate

Nov. 30 2009-Dec. 4 2009

Firstpage

1

Lastpage

6

Abstract

An overview of the current status of the semiconductor device technologies and circuits for terahertz applications, especially for the broadband wireless communication systems, is provided in this work. Comparison between various semiconductor device technologies such as III-V HEMTs and HBTs, SiGe HBTs, and Si MOSFETs is presented and the current record performances of each technology are described. In addition, the best performing amplifiers, oscillators, and mixers as of today for possible terahertz communication system applications are presented and related issues are discussed.

Keywords

Ge-Si alloys; III-V semiconductors; MOSFET; amplifiers; elemental semiconductors; heterojunction bipolar transistors; high electron mobility transistors; mixers (circuits); oscillators; silicon; terahertz wave devices; HBT; HEMT; MOSFET; Si; SiGe; amplifiers; broadband wireless communication systems; circuits; mixers; oscillators; semiconductor device technologies; terahertz communication; Broadband communication; Circuits; HEMTs; III-V semiconductor materials; MODFETs; Semiconductor devices; Silicon germanium; Submillimeter wave communication; Submillimeter wave technology; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

GLOBECOM Workshops, 2009 IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-5626-0

Electronic_ISBN

978-1-4244-5625-3

Type

conf

DOI

10.1109/GLOCOMW.2009.5360683

Filename

5360683