• DocumentCode
    2778548
  • Title

    Current Density Dependence of EM (Electromigration)-Induced Flip-Chip Cu Pad Consumption

  • Author

    Liao, P.L. ; Liu, C.Y.

  • Author_Institution
    Nat. Central Univ., Jhongli
  • fYear
    2006
  • fDate
    11-14 Dec. 2006
  • Firstpage
    1
  • Lastpage
    16
  • Abstract
    The article consists of a Powerpoint presentation on current density dependence of electromigration induced flip-chip Cu pad consumption. The areas discussed include: electromigration; failure models; annealing; current density; activation energy; copper consumption and current stressing.
  • Keywords
    annealing; copper; current density; electromigration; failure analysis; flip-chip devices; Cu; activation energy; annealing; current density; current stressing; electromigration; failure models; flip-chip copper pad consumption; Annealing; Bonding; Cathodes; Copper; Current density; Electromigration; Electrons; Ice surface; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Materials and Packaging, 2006. EMAP 2006. International Conference on
  • Conference_Location
    Kowloon
  • Print_ISBN
    978-1-4244-0833-7
  • Type

    conf

  • DOI
    10.1109/EMAP.2006.4430690
  • Filename
    4430690
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2778548