DocumentCode :
2778548
Title :
Current Density Dependence of EM (Electromigration)-Induced Flip-Chip Cu Pad Consumption
Author :
Liao, P.L. ; Liu, C.Y.
Author_Institution :
Nat. Central Univ., Jhongli
fYear :
2006
fDate :
11-14 Dec. 2006
Firstpage :
1
Lastpage :
16
Abstract :
The article consists of a Powerpoint presentation on current density dependence of electromigration induced flip-chip Cu pad consumption. The areas discussed include: electromigration; failure models; annealing; current density; activation energy; copper consumption and current stressing.
Keywords :
annealing; copper; current density; electromigration; failure analysis; flip-chip devices; Cu; activation energy; annealing; current density; current stressing; electromigration; failure models; flip-chip copper pad consumption; Annealing; Bonding; Cathodes; Copper; Current density; Electromigration; Electrons; Ice surface; Temperature; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Materials and Packaging, 2006. EMAP 2006. International Conference on
Conference_Location :
Kowloon
Print_ISBN :
978-1-4244-0833-7
Type :
conf
DOI :
10.1109/EMAP.2006.4430690
Filename :
4430690
Link To Document :
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