DocumentCode :
2778602
Title :
Photoluminescence in CdIn/sub 2/O/sub 4/ and CdGa/sub 2/O/sub 4/
Author :
Zhitar, V. ; Muntean, S. ; Volodina, G. ; Arama, E. ; Shemyakova, T.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci. of the Republic of Moldova, Chisinau
Volume :
2
fYear :
2005
fDate :
5-5 Oct. 2005
Firstpage :
301
Abstract :
Crystalline samples of CdIn2O4 and CdGa2O4 of cubic syngony have been prepared using a method similar to that commonly used for preparation of ceramic materials. Photoluminescence spectra measured at temperature 77 and 300 K under Ar laser excitation consist of intensive narrow red bands generated due to recombination involving centers defined by the intrinsic defect structure
Keywords :
cadmium compounds; ceramics; defect states; photoluminescence; 300 K; 77 K; Ar laser excitation; CdGa2O4; CdIn2O4; ceramic materials; crystalline samples; intrinsic defect structure; photoluminescence; Annealing; Argon; Ceramics; Crystalline materials; Crystals; Laser excitation; Optical materials; Photoluminescence; Temperature measurement; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-9214-0
Type :
conf
DOI :
10.1109/SMICND.2005.1558784
Filename :
1558784
Link To Document :
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