Title :
Tuning characteristics of an external cavity semiconductor laser
Author :
Skipper, B.F. ; Olesen, H.
Author_Institution :
Res. & Dev., Jydsk Telefon, Arhus-Tranbjerg J, Denmark
Abstract :
Tuning properties of a 1.3 μm external AR-coated semiconductor laser (ECL) with grating feedback and a cavity length of approximately 40 mm have been investigated. The measured threshold current, Lorentzian linewidth and output power have been compared with theoretical simulations based on an optical transmission line model, which is capable of handling strong and frequency selective optical feedback in semiconductor lasers. An analysis technique to determine the Lorentzian linewidth in the presence of Gaussian linewidth broadening is presented. The Lorentzian linewidth can consistently be determined within 10% independent of the length of the delay fibre
Keywords :
laser cavity resonators; laser tuning; optical communication equipment; semiconductor junction lasers; spectral line breadth; 1.3 micron; Gaussian linewidth broadening; Lorentzian linewidth; external cavity semiconductor laser; grating feedback; optical transmission line model; output power; threshold current;
Conference_Titel :
Sources for Coherent Optical Communication, IEE Colloquium on
Conference_Location :
London
