DocumentCode
2778644
Title
A compact steady-state self-heating model for a thin SOI LIGBT
Author
Gamage, S. ; Pathirana, V. ; Udrea, F.
Author_Institution
Cambridge Univ.
Volume
2
fYear
2005
fDate
5-5 Oct. 2005
Firstpage
311
Abstract
Several vertical IGBT electro-thermal models are currently available on circuit simulators. However, no reliable electro-thermal models have been proposed for the lateral IGBT (LIGBT). In this paper we present a novel steady-state electro-thermal model for a LIGBT on thin Silicon-On-Insulator (SOI) technology. The model is fully-assessed against experimental results and numerical simulations
Keywords
insulated gate bipolar transistors; semiconductor device models; silicon-on-insulator; Si; circuit simulators; electrothermal models; numerical simulations; steady-state self-heating model; thin SOI lateral IGBT; thin silicon-on-insulator technology; Biomembranes; Circuit simulation; Insulated gate bipolar transistors; Leg; Numerical simulation; Silicon; Steady-state; Temperature distribution; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location
Sinaia
Print_ISBN
0-7803-9214-0
Type
conf
DOI
10.1109/SMICND.2005.1558787
Filename
1558787
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