DocumentCode :
2778646
Title :
Bipolar behavior in a near UV electroluminescent silicon polymer
Author :
Furukawa, Kszuoki ; Yuan, Chien-Hua ; Hoshino, Satoshi ; Suzuki, Hiroyuki ; Matsumoto, Naoyuki
Author_Institution :
NTT Basic Res. Labs., Kanagawa, Japan
fYear :
1999
fDate :
1999
Firstpage :
25
Lastpage :
28
Abstract :
To better understand the transport behavior of carriers in polymer LEDs, a near-ultraviolet electroluminescent polymer, poly[bis(p-butylphenyl)silane] was investigated by means of time-of-flight method. The signal of carrier migration was detected when pulsed coherent light at 387 nm was illuminated on the high electric field charged polymer thin film. It shows a hole drift mobility of 1×10-4 cm2/Vs, a typical phenomenon often observed in polysilanes. For an oppositely charged polymer film, an intense signal appeared although there was no indication of electron migration. It strongly suggests that electrons are readily injected into the polymer film. Thus, the bipolar nature of the described polymer facilitates the injection of electrons and holes into the polymer matrix and leads to the occurrence of an efficient electroluminescence in spite of a single-layer diode structure
Keywords :
electroluminescence; hole mobility; light emitting diodes; polymer films; 387 nm; TOF method; bipolar behavior; carrier injection; carrier migration signal; carrier transport behavior; efficient electroluminescence; high electric field charged polymer thin film; hole drift mobility; near UV electroluminescent silicon polymer; nonradiative quenching; oppositely charged polymer film; poly[bis(p-butylphenyl)silane]; polymer LED; polysilanes; pulsed coherent light; single-layer diode structure; Electrodes; Electroluminescence; Flat panel displays; Gold; Nonhomogeneous media; Optical pulse generation; Organic light emitting diodes; Polymer films; Pump lasers; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information Display, 1999. ASID '99. Proceedings of the 5th Asian Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
957-97347-9-8
Type :
conf
DOI :
10.1109/ASID.1999.762705
Filename :
762705
Link To Document :
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