On the defects introduced by AC/DC degradation in SOI "smart-cut" body contact MOSFETS

Author

Exarchos, M.A. ; Papaioannou, G.J. ; Jomaah, J. ; Balestra, F.

Author_Institution

Dept. of Phys., Nat. & Kapodistrian Univ. of Athens

Volume

2

fYear

2005

fDate

5-5 Oct. 2005

Firstpage

323

Abstract

The impact of static (DC) and dynamic (AC) hot carrier stress on SOI "smart-cut" body contact MOSFETs is investigated by means of Deep Level Transient Spectroscopy (DLTS) technique. The study was focused on drain current signal recording. Transient parasitic effects such as drain current overshoot undershoot were suppressed by adjusting properly an electrometer amplifier gain unit to the transistor body contact under DC degradation regime the revelation of discrete traps, some of which were previously reported in literature, is evident. Under AC degradation regime, although the presence of interface states is dominant, shallow states are also monitored

Keywords

MOSFET; deep level transient spectroscopy; hot carriers; silicon-on-insulator; AC-DC degradation; SOI; deep level transient spectroscopy; drain current signal recording; electrometer amplifier gain; hot carrier stress; interface states; smart-cut body contact MOSFET; Circuit stability; Degradation; Integrated circuit reliability; MOSFETs; Monitoring; Physics; Solid state circuits; Spectroscopy; Stress; Tiles;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International

Conference_Location

Sinaia

Print_ISBN

0-7803-9214-0

Type

conf

DOI

10.1109/SMICND.2005.1558790

Filename

1558790