Title :
Interpreting fitting parameters of temperature dependence of dark currents in some CCDs
Author :
Bodegom, E. ; Widenhorn, R. ; lordache, D.A.
Author_Institution :
Dept. of Phys., Portland State Univ., OR
Abstract :
The experimental results concerning the temperature dependence of the dark currents in some charge-coupled devices (CCDs) were analyzed. It was found that the used theoretical model allows: (i) the evaluation of the lowest limit of experimental errors (involving the systematic ones), (ii) the study of Meyer-Neldel relations, pointing out the high correlation of diffusion dark currents with the energy-gap Eg, unlike the corresponding weak correlation of depletion dark currents (iii) rather accurate assignments of the obtained values of deep-level traps energies to some specific impurities
Keywords :
charge-coupled devices; dark conductivity; deep levels; diffusion; energy gap; CCD; Meyer-Neldel relations; charge-coupled devices; dark currents; deep-level traps; depletion currents; diffusion currents; energy-gap; Charge carrier processes; Charge coupled devices; Dark current; Electron traps; Electronic mail; Energy states; Physics; Predictive models; Temperature dependence;
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-9214-0
DOI :
10.1109/SMICND.2005.1558791