DocumentCode
2778732
Title
Amorphous silicon core-shell nanowire Schottky solar cells
Author
Zhu, Jia ; Xu, Yueqing ; Wang, Qi ; Cui, Yi
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2010
fDate
20-25 June 2010
Abstract
Nanostructures such as nanoparticles and nanowires have been demonstrated as powerful tools to improve light absorption, to enable low temperature process, to demonstrate multi-exciton generation, and to decouple the absorption depth and carrier diffusion length. Here we demonstrated the first amorphous silicon core-shell nanowire solar cells, which can be fabricated through a low temperature, scalable processes. A simple Schottky based nanowire device structure is used to demonstrate the concept. The device demonstrated much higher short circuit current (>150%) compared to the control thin film device, because of improved carrier collection. A core-shell nanowire solar cells based on p-i-n configuration is also proposed to further increase the efficiency. It provides a viable pathway to solve the mismatch between carrier diffusion length and absorption depth in amorphous silicon and to dramatically improve the device performance.
Keywords
nanowires; silicon; solar cells; Si; absorption depth; amorphous core-shell nanowire Schottky solar cells; carrier collection; carrier diffusion length; control thin film device; light absorption; multiexciton generation; nanoparticles; nanostructures; p-i-n configuration;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5616752
Filename
5616752
Link To Document