• DocumentCode
    2778732
  • Title

    Amorphous silicon core-shell nanowire Schottky solar cells

  • Author

    Zhu, Jia ; Xu, Yueqing ; Wang, Qi ; Cui, Yi

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    Nanostructures such as nanoparticles and nanowires have been demonstrated as powerful tools to improve light absorption, to enable low temperature process, to demonstrate multi-exciton generation, and to decouple the absorption depth and carrier diffusion length. Here we demonstrated the first amorphous silicon core-shell nanowire solar cells, which can be fabricated through a low temperature, scalable processes. A simple Schottky based nanowire device structure is used to demonstrate the concept. The device demonstrated much higher short circuit current (>150%) compared to the control thin film device, because of improved carrier collection. A core-shell nanowire solar cells based on p-i-n configuration is also proposed to further increase the efficiency. It provides a viable pathway to solve the mismatch between carrier diffusion length and absorption depth in amorphous silicon and to dramatically improve the device performance.
  • Keywords
    nanowires; silicon; solar cells; Si; absorption depth; amorphous core-shell nanowire Schottky solar cells; carrier collection; carrier diffusion length; control thin film device; light absorption; multiexciton generation; nanoparticles; nanostructures; p-i-n configuration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5616752
  • Filename
    5616752