Title :
Fabrication and estimation of characteristics for Nb-silicide FEAs
Author :
Park, Jae Seok ; Lee, Sanjo ; Ju, Byeong Kwon ; Jang, Jin ; Jeon, D. ; Oh, Myung Hwan
Author_Institution :
Electron. Mater. & Devices Res. Centre, KIST, Seoul, South Korea
Abstract :
Electron emission currents and stability in the silicon-tip field emission arrays (FEAs) have been improved by silicide formation on silicon using Nb. The formation of Nb-silicide was confirmed by X-Ray diffraction data. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47 V and the emission current fluctuation was decreased from 5% to 2%
Keywords :
X-ray diffraction; annealing; current fluctuations; electron field emission; niobium compounds; vacuum microelectronics; work function; 47 V; Fowler-Nordheim plots; Nb-silicide field emitter arrays; NbSi; Si; XRD data; annealing; effective work function; electron emission currents; emission current fluctuation; fabrication; silicide formation; stability; turn-on voltage; volcano-type geometry; Anodes; Electron emission; Etching; Fabrication; Niobium; Plasma temperature; Silicides; Silicon compounds; Stability; Voltage;
Conference_Titel :
Information Display, 1999. ASID '99. Proceedings of the 5th Asian Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
957-97347-9-8
DOI :
10.1109/ASID.1999.762711
